GaN Systems Inc. GaN Power Transistor Test/Evaluation Product GS61008P-EVBHF

The GS61008P-EVBHF evaluation board (EVB) allows the user to evaluate GaN Systems’ GS61008P Enhancement Mode High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29101 gate driver in a half-bridge configuration. The PE29101 integrated high-speed driver is designed to control the gates of GaN Systems’ E-HEMTs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub nano-second range.