100 V GaN E-HEMT FB EVB optimized for Class D Amplifiers
The GS61004B-EVBCD evaluation board allows the user to evaluate GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration. The design is optimized for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.
Features
Four GS61004B GaN transistors and two PE29102 E-HEMT drivers
GaN transistors operable up to 100 MHz
Transistor driver operable up to 40MHz
Best-in-class propagation delay
Optimized, Vcc independent, for matched dead time
Integrated dead-time control, resistor-adjustable
100 V GaN E-HEMT FB EVB optimized for Class D Amplifiers
The GS61004B-EVBCD evaluation board allows the user to evaluate GaN Systems’ GS61004B Enhancement mode-High Electron Mobility Transistors (E-HEMTs) with the Peregrine PE29102 gate driver in a full-bridge configuration. The design is optimized for Class D amplifier applications. The outputs of the PE29102 are capable of providing switching transition speeds in the sub nano-second range for hard switching applications.
Features
- Four GS61004B GaN transistors and two PE29102 E-HEMT drivers
- GaN transistors operable up to 100 MHz
- Transistor driver operable up to 40MHz
- Best-in-class propagation delay
- Optimized, Vcc independent, for matched dead time
- Integrated dead-time control, resistor-adjustable
