Fuji Electric Global N-Channel 23A 500V 0.245ohm MOSFET Transistor FMV23N50E

Power Field-Effect Transistor, 23A I(D), 500V, 0.245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F(SLS), 3 PIN Product overview: FMV23N50E from Fuji Electric is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 23A, 500V, 0.245ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 23A, 500V, 0.245ohm, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FMV23N50E can be used for catalog matching and distributor lookup.

Manufacturer: Fuji Electric
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1004278-FMV23N50E
Length: 9.9822 mm
Power Dissipation: 130 W
Height: 15.0114 mm
Number of Pins: 3
Width: 4.4958 mm
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): STW10N95K5; STP10N95K5; FQP4N80; FQP3N90; IRF840APBF; IRFB9N65APBF;
Popularity: Low
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Turn-On Delay Time: 26 ns
Drain to Source Breakdown Voltage: 500 V
Turn-Off Delay Time: 150 ns
Drain to Source Resistance: 245 mΩ
Gate to Source Voltage (Vgs): 30 V