Fuji Electric Corp. of America Transistor 2SK3550

Description
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 900V, 1.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET. FREE 2 YEAR RADWELL WARRANTY
Description
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 900V, 1.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 48435204 - Radwell International
Willingboro, NJ, United States
Transistor
48435204
Transistor 48435204
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 900V, 1.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 10A I(D), 900V, 1.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 48435204
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.7 GHz, 65 Watt, 50 V GaN RF Power Transistor - QPD1015 - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Power Gain 20 dB
View Details
3 suppliers
Hard To Find - 06N80C3 - 1120748-06N80C3 - Win Source Electronics
Infineon Technologies AG
Specs
Package Type SOT3
View Details