Fuji Electric Corp. of America MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1 2SK2907-01R

Description
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`
Description
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Suppliers

Company
Product
Description
Supplier Links
Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1
70212474
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1 70212474
Features: FAP-III = Logic Level, High Avalanche Ruggedness FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V FAP-IIA = Reduced Turn Off Time FAP-IIIBH = High Speed Non Logic FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V FAP-G = Ultra Fast Switching Trench Gate Series = Ultra Low On-Resistance`

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA = Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site

Technical Specifications

  Allied Electronics, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 70212474
Product Name MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1
Polarity N-Channel
V(BR)DSS 60 volts
Transconductance 0.0550 kS
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1219628 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1219628
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
Package Type Soic
View Details
CSD19533KCS 100V, 8.7mOhm, TO-220 N-Channel NexFET™ Power MOSFET - CSD19533KCS - Texas Instruments
Texas Instruments
CSD19533KCS 100V, 8.7mOhm, TO-220 N-Channel NexFET™ Power MOSFET
CSD19533KCS
Specs
Polarity N-Channel
V(BR)DSS 100 volts
IDSS 104000 milliamps
View Details
8 suppliers
60 V, 360 mA N-channel Trench MOSFET - 2N7002P,235 - Nexperia B.V.
Nexperia B.V.
60 V, 360 mA N-channel Trench MOSFET
2N7002P,235
Specs
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 360000 milliamps
View Details
5 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2625ALS - 922460-2SK2625ALS - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2625ALS
2SK2625ALS
Specs
Polarity N-Channel
TJ 150 C (302 F)
Package Type TO-220; SOT3; TO-220FI(LS)
View Details