FUJI ELECTRIC CORP. OF AMERICA
2SK2907-01R -- MOSFET, POWER;N-CH;VDSS 60V;RDS(ON) 5.7MILLIOHMS;ID +/-100A;TO-3PF;PD 125W;VF 1
Fuji Electric Corp. of America
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1
2SK2907-01R
Description
Features:
FAP-III = Logic Level, High Avalanche Ruggedness
FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
FAP-IIA = Reduced Turn Off Time
FAP-IIIBH = High Speed Non Logic
FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
FAP-G = Ultra Fast Switching
Trench Gate Series = Ultra Low On-Resistance`
Description
Features:
FAP-III = Logic Level, High Avalanche Ruggedness
FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
FAP-IIA = Reduced Turn Off Time
FAP-IIIBH = High Speed Non Logic
FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
FAP-G = Ultra Fast Switching
Trench Gate Series = Ultra Low On-Resistance`
Suppliers
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1
70212474
Features:
FAP-III = Logic Level, High Avalanche Ruggedness
FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
FAP-IIA = Reduced Turn Off Time
FAP-IIIBH = High Speed Non Logic
FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
FAP-G = Ultra Fast Switching
Trench Gate Series = Ultra Low On-Resistance`
Features:
- FAP-III = Logic Level, High Avalanche Ruggedness
- FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
- FAP-IIA = Reduced Turn Off Time
- FAP-IIIBH = High Speed Non Logic
- FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
- FAP-G = Ultra Fast Switching
- Trench Gate Series = Ultra Low On-Resistance`
Supplier's Site
Technical Specifications
|
Product Category
|
Metal-Oxide Semiconductor FET (MOSFET) |
|
Product Number
|
70212474 |
|
Product Name
|
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 5.7Milliohms;ID +/-100A;TO-3PF;PD 125W;VF 1 |
|
Polarity
|
N-Channel
|
|
V(BR)DSS
|
60 volts
|
|
Transconductance
|
0.0550 kS
|
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