Foshan Blue Rocket Electronics Co.,Ltd. Transistors 2SA812-G

Description
50V 200mW 200@1mA,6V 100mA PNP SOT-23 Bipolar (BJT) ROHS
  • Transistors - 2SA812-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
50V 200mW 200@1mA,6V 100mA PNP SOT-23 Bipolar (BJT) ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - 2SA812-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
2SA812-G
Transistors 2SA812-G
50V 200mW 200@1mA,6V 100mA PNP SOT-23 Bipolar (BJT) ROHS

50V 200mW 200@1mA,6V 100mA PNP SOT-23 Bipolar (BJT) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 2SA812-G
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Module - 158777848 - Radwell International
Fuji Electric Corp. of America
IGBT Module
6MBP15VSG060-50
Specs
Transistor Type IGBT
View Details
Single Bipolar Transistors - 1727-BC807-16LRCT-ND - DigiKey
Nexperia B.V.
Single Bipolar Transistors
BC807-16LR
Specs
Polarity PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
Transistor Grade / Operating Range Automotive
View Details
6 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R060M1H - AIMDQ75R060M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R060M1H
AIMDQ75R060M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
IGBT MODULE,1 PHASE,FR11,460A,600V CLASS - SK-H1-QOUT-E460 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
IGBT MODULE,1 PHASE,FR11,460A,600V CLASS
SK-H1-QOUT-E460
Specs
Transistor Type IGBT
View Details