Foshan Blue Rocket Electronics Co.,Ltd. Transistors 2N5551-B

Description
160V 625mW 100@10mA,5V 600mA NPN TO-92-3 Bipolar (BJT) ROHS
Datasheet
Description
160V 625mW 100@10mA,5V 600mA NPN TO-92-3 Bipolar (BJT) ROHS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Transistors - 2N5551-B - ODG (Origin Data Global)
Shenzhen, China
Transistors
2N5551-B
Transistors 2N5551-B
160V 625mW 100@10mA,5V 600mA NPN TO-92-3 Bipolar (BJT) ROHS

160V 625mW 100@10mA,5V 600mA NPN TO-92-3 Bipolar (BJT) ROHS

Supplier's Site
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
2N5551-B
Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT 2N5551-B
160V 625mW 100@10mA,5V 600mA NPN TO-92-3 Bipolar Transistors - BJT ROHS

160V 625mW 100@10mA,5V 600mA NPN TO-92-3 Bipolar Transistors - BJT ROHS

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) LCSC Electronics Technology (HK) Limited
Product Category Transistors Bipolar RF Transistors
Product Number 2N5551-B 2N5551-B
Product Name Transistors Triode/MOS Tube/Transistor >> Bipolar Transistors - BJT
Polarity NPN
Package Type TO-92
IC(max) 600 milliamps
VCEO 160 volts
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