Flexxon Memory FEMC016GTTE7-T14-18

Description
FLASH - NAND Memory IC 128Gb (16G x 8) eMMC 200MHz 153-FBGA (11.5x13)
Request a Quote
Description
FLASH - NAND Memory IC 128Gb (16G x 8) eMMC 200MHz 153-FBGA (11.5x13)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

ERROR: no product mention

Datasheet Summary
Powered by GS/AI

ERROR: no product mention

Suppliers

Company
Product
Description
Supplier Links
Memory - 3052-FEMC016GTTE7-T14-18-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NAND Memory IC 128Gb (16G x 8) eMMC 200MHz 153-FBGA (11.5x13)

FLASH - NAND Memory IC 128Gb (16G x 8) eMMC 200MHz 153-FBGA (11.5x13)

Buy Now Datasheet
IC FLASH 128GBIT EMMC 153FBGA

IC FLASH 128GBIT EMMC 153FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - FEMC016GTTE7-T14-18 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
FEMC016GTTE7-T14-18
Integrated Circuits (ICs) - Memory - Memory FEMC016GTTE7-T14-18
IC FLASH 128GBIT EMMC 153FBGA

IC FLASH 128GBIT EMMC 153FBGA

Supplier's Site
Memory - FEMC016GTTE7-T14-18 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 128Gbit eMMC 200 MHz 153-FBGA (11.5x13)

FLASH - NAND Memory IC 128Gbit eMMC 200 MHz 153-FBGA (11.5x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 3052-FEMC016GTTE7-T14-18-ND FEMC016GTTE7-T14-18 FEMC016GTTE7-T14-18 FEMC016GTTE7-T14-18
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash Flash; Flash Flash; Non-Volatile Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 153-VFBGA BGA BGA; 153-VFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 8611200826 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 043641RLAD-6 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 3 ns
Density 4500 kbits
View Details