EVVO Semi Single Bipolar Transistors NJW21193G

The NJW21193G is a silicon PNP epitaxial transistor designed for high-fidelity audio amplifier output stages, with a complementary pairing to the NJW21194G. It is packaged in a TO-3PB case and rated for a collector-emitter voltage of -250 V and a continuous collector current of -16 A. The device supports a maximum collector power dissipation of 200 W at Tc=25℃ and has a junction-to-case thermal resistance of 0.63 °C/W. Electrical characteristics include a DC current gain (hFE) of 20 to 80 at -8 A collector current and a collector-emitter saturation voltage of -1.4 V at -8 A and -0.8 A base current. The transition frequency is 4 MHz at -1 A collector current.