EVVO Semi Single Bipolar Transistors MJE15032C

The MJE15032C is an NPN silicon power transistor intended for use as a push-pull stage in high-fidelity audio amplifiers. It is packaged in a TO-220W case with dimensions ranging from 9.8 to 10.2 mm in width, 15.1 to 15.5 mm in height, and 4.05 to 4.45 mm in lead thickness. The device has a collector-emitter voltage rating of 250 V, a continuous collector current of 8 A, and a power dissipation of 50 W at Tc=25°C. Its feature frequency exceeds 30 MHz, and the DC current gain is a minimum of 70 at IC=0.5 A and VCE=5 V. The collector-emitter saturation voltage is 0.5 V at IC=1 A and IB=-100 mA. The junction-to-case thermal resistance is 2.5 °C/W. The part meets the absolute maximum ratings for junction temperature up to 150°C and storage temperature from -55°C to 150°C.