EVVO Semi Single Bipolar Transistors 2SC5359

The 2SC5359 is an NPN silicon bipolar epitaxial planar power transistor designed for high-fidelity audio amplifier output stages, with a TO-3PL package. It supports a continuous collector current of 15 A and a collector-emitter breakdown voltage of at least 230 V. The transistor has a collector power dissipation of 180 W at Tc=25°C, a junction temperature rating of 150°C, and a characteristic frequency exceeding 30 MHz. The collector-emitter saturation voltage is specified between 0.4 and 1.5 V at I_C=8 A and I_B=0.8 A, with a base-emitter voltage of 1.0 to 1.5 V at I_C=7 A. Thermal resistance from junction to case is 0.35 °C/W. Storage temperature ranges from -55°C to 150°C.