EVVO Semi Single Bipolar Transistors 2SC4542

Silicon NPN power transistor designed for horizontal deflection output in high-resolution displays and high-speed switching regulator applications. Housed in a TO-220 package, it has a collector-base voltage rating of 1500 V, collector-emitter voltage of 600 V, and continuous collector current of 10 A. Maximum collector power dissipation is 50 W at 25°C junction temperature. Features include a collector-emitter saturation voltage of 5.0 V at 7 A collector current, DC current gain of at least 8 at 1 A collector current, current-gain bandwidth product of 1 to 3 MHz, output capacitance of 210 pF, and switching times with fall time of 0.1 to 0.2 μs. Junction and storage temperature range is from -55°C to 150°C.