EVVO Semi Single Bipolar Transistors 2SC4029

Silicon NPN power transistor designed for high-power amplifier applications, including 120 W high-fidelity audio output stages. It features a collector-emitter voltage rating of 230 V, continuous collector current of 15 A, and collector power dissipation of 150 W at TC=25°C. The junction temperature ranges from -55°C to 150°C. Electrical characteristics include a DC current gain (hFE) of 35 to 160, collector-emitter saturation voltage of 3.0 V at IC=8.0 A, and current-gain bandwidth product of 30 MHz. The device is housed in a TO-3 package with a collector-base voltage rating of 230 V and emitter-base voltage of 5 V.