EVVO Semi Single Bipolar Transistors 2SC3519A

The 2SC3519A is an NPN silicon bipolar epitaxial planar power transistor paired with the 2SA1386A PNP device for high-fidelity audio amplifier output stages. It is housed in a TO-3PN package with dimensions ranging from 15.2 to 16.0 mm in E, 13.2 to 13.6 mm in E1, and 19.8 to 20.2 mm in H. The transistor supports a continuous collector current of 15 A, collector-emitter voltage of 180 V, and power dissipation of 130 W at Tc=25°C. It features a transition frequency greater than 40 MHz and a collector-emitter saturation voltage of 2.0 V at Ic=5 A and Ib=0.5 A. The junction-to-case thermal resistance is 0.35 °C/W. Operating junction temperature ranges from -55°C to 150°C.