EVVO Semi Single Bipolar Transistors 2SB688

The 2SB688 is a PNP bipolar transistor designed for high-fidelity audio power amplifiers, featuring an 8 A collector current rating and a 120 V collector-emitter breakdown voltage. It is packaged in a TO-3PS case with dimensions ranging from 15.1 to 15.9 mm in width, 13.1 to 13.6 mm in base width, and 19.8 to 21.0 mm in height. The transistor supports a maximum power dissipation of 80 W at 25°C case temperature and operates within a junction temperature range of -55°C to 150°C. It exhibits a transition frequency greater than 10 MHz, a collector-emitter saturation voltage of 2.5 V at 5 A collector current, and a current gain (hFE) between 35 and 160, depending on operating conditions. Thermal resistance from junction to case is 0.32 °C/W. The device meets typical high-reliability criteria for high-temperature and high-current applications.