2SB649 is a PNP plastic-encapsulated bipolar transistor for low-frequency power amplification, complementary to 2SD669. It is packaged in a TO-126 case measuring 7.40-7.80 mm in length, 10.60-11.00 mm in width, and 15.30-15.70 mm in height. Maximum ratings include a collector-base voltage of -180 V, collector-emitter voltage of -150 V, and continuous collector current of -1.5 A with collector dissipation of 1 W. The junction and storage temperature range is -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) of 60 to 250 at -100 mA and -500 mA collector current, collector-emitter saturation voltage of 0.5 V at -1.5 A collector current, and transition frequency of 50 MHz. The device meets no specified industry standards beyond its thermal and electrical ratings.
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2SB649 is a PNP plastic-encapsulated bipolar transistor for low-frequency power amplification, complementary to 2SD669. It is packaged in a TO-126 case measuring 7.40-7.80 mm in length, 10.60-11.00 mm in width, and 15.30-15.70 mm in height. Maximum ratings include a collector-base voltage of -180 V, collector-emitter voltage of -150 V, and continuous collector current of -1.5 A with collector dissipation of 1 W. The junction and storage temperature range is -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) of 60 to 250 at -100 mA and -500 mA collector current, collector-emitter saturation voltage of 0.5 V at -1.5 A collector current, and transition frequency of 50 MHz. The device meets no specified industry standards beyond its thermal and electrical ratings.
