EVVO Semi Single Bipolar Transistors 2SB647

2SB647 is a PNP silicon power transistor designed for general-purpose amplification and switching applications. It is packaged in a TO-92L case and has a maximum collector current of -1 A and a collector power dissipation of 900 mW. The transistor has a collector-emitter voltage rating of -80 V, a collector-base voltage rating of -120 V, and an emitter-base voltage rating of -5 V. Its junction temperature ranges up to 150 °C, and storage temperature ranges from -55 °C to +150 °C. The DC current gain (hFE) ranges from 60 to 200, depending on the classification. Collector-emitter saturation voltage is -1 V at -0.5 A collector current and -50 mA base current. Transition frequency is 140 MHz. Complementary to 2SD667A.