EVVO Semi Single Bipolar Transistors 2SA1186

The 2SA1186 is a PNP silicon bipolar epitaxial planar transistor designed for high-fidelity audio power amplification, paired with the 2SC2837 NPN transistor. It is packaged in a TO-3PN case with dimensions of 19.8-20.2 mm in height and 15.2-16.0 mm in width. The device supports a maximum collector-emitter voltage of 150 V, a collector current of 10 A, and a power dissipation of 100 W at Tc=25 °C. It features a transition frequency greater than 60 MHz and a collector-emitter saturation voltage of 2.0 V at Ic=5 A and Ib=0.5 A. The junction-to-case thermal resistance is 0.35 ℃/W. The transistor meets typical operational requirements for high-power audio applications under extended temperature conditions.