Everspin Technologies, Inc. Memory EMD4E001G16G2-150CAS2R

Description
MRAM (Magnetoresistive RAM) Memory IC 1Gbit Parallel 667 MHz 18 ns 96-BGA (10x13)
  • Memory - EMD4E001G16G2-150CAS2R - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
MRAM (Magnetoresistive RAM) Memory IC 1Gbit Parallel 667 MHz 18 ns 96-BGA (10x13)
Datasheet

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Memory - EMD4E001G16G2-150CAS2R - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
EMD4E001G16G2-150CAS2R
Memory EMD4E001G16G2-150CAS2R
MRAM (Magnetoresistive RAM) Memory IC 1Gbit Parallel 667 MHz 18 ns 96-BGA (10x13)

MRAM (Magnetoresistive RAM) Memory IC 1Gbit Parallel 667 MHz 18 ns 96-BGA (10x13)

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number EMD4E001G16G2-150CAS2R
Product Name Memory
Memory Category RAM
Access Time 18 ns
Operating Temperature 0 to 85 C (32 to 185 F)
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