The EL817-G series consists of a 4-pin DIP phototransistor photocoupler with an infrared emitting diode optically coupled to a phototransistor, designed for signal transmission between circuits of different potentials. The package is a 4-pin DIP with options for wide lead spacing and surface mount. It offers an isolation voltage of 5000 Vrms, a collector-emitter voltage rating of 80 V, and operates from -55°C to +110°C. Current transfer ratio for the EL817C variant ranges from 200% to 400% at IF = 5mA and VCE = 5V. The device meets UL, cUL, VDE, SEMKO, NEMKO, DEMKO, FIMKO, and CQC approvals, is RoHS compliant, and halogen-free. It includes creepage distance greater than 7.62 mm.
OPTOISOLTR 5KV TRANSISTOR 4-DIP Product overview: EL817(C)-G from Everlight Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5KV, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 5KV, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-EL817(C)-G can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-EL817(C)-G |
| Product Name | 5KV DIP Bipolar Transistor |
| Package Type | Tube |
| Packing Method | Tube |
| IC(max) | 50000 milliamps |
