Etron Technology, Inc. Memory EM6HE08EW9G-10IH

Description
4GB (512MX8) DDR3. 78-BALL WINDO
Datasheet
Description
4GB (512MX8) DDR3. 78-BALL WINDO
Datasheet

Suppliers

Company
Product
Description
Supplier Links
4GB (512MX8) DDR3. 78-BALL WINDO

4GB (512MX8) DDR3. 78-BALL WINDO

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - EM6HE08EW9G-10IH - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM6HE08EW9G-10IH
Integrated Circuits (ICs) - Memory - Memory EM6HE08EW9G-10IH
IC DRAM 4GBIT PAR 78FBGA

IC DRAM 4GBIT PAR 78FBGA

Supplier's Site
Memory - EM6HE08EW9G-10IH - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (7.5x10.6)

SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (7.5x10.6)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6HE08EW9G-10IH EM6HE08EW9G-10IH EM6HE08EW9G-10IH
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns
Density 4000000 kbits 4000000 kbits 4000000 kbits
Data Rate 933 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71024S12TYI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - A2C00061887 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
 - 93415FM - Rochester Electronics
Specs
Memory Category SRAM Chip
Package Type CDFP16
View Details
3 suppliers
Memory - AS8FLC1M32A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details