Etron Technology, Inc. Memory EM6HE08EW8D-10H

Description
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)
Datasheet
Description
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EM6HE08EW8D-10H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)

SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)

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Integrated Circuits (ICs) - Memory - Memory - EM6HE08EW8D-10H - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM6HE08EW8D-10H
Integrated Circuits (ICs) - Memory - Memory EM6HE08EW8D-10H
IC DRAM 4GBIT PAR 78FBGA

IC DRAM 4GBIT PAR 78FBGA

Supplier's Site
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6HE08EW8D-10H EM6HE08EW8D-10H EM6HE08EW8D-10H
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 4000000 kbits 4000000 kbits 4000000 kbits
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