Etron Technology, Inc. Memory EM6HE08EW3F-10IH

Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet
Description
IC DRAM 4GBIT PARALLEL 78FBGA
Datasheet

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Product
Description
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IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site Datasheet
Memory - EM6HE08EW3F-10IH - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.6)

SDRAM - DDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.6)

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Integrated Circuits (ICs) - Memory - Memory - EM6HE08EW3F-10IH - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM6HE08EW3F-10IH
Integrated Circuits (ICs) - Memory - Memory EM6HE08EW3F-10IH
IC DRAM 4GBIT PARALLEL 78FBGA

IC DRAM 4GBIT PARALLEL 78FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6HE08EW3F-10IH EM6HE08EW3F-10IH EM6HE08EW3F-10IH
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns
Density 4000000 kbits 4000000 kbits 4000000 kbits
Operating Temperature -40 to 95 C (-40 to 203 F)
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