Etron Technology, Inc. Memory EM6AA160TSE-4G

Description
IC DRAM 256MBIT PAR 66TSOP II
Datasheet
Description
IC DRAM 256MBIT PAR 66TSOP II
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site Datasheet
Memory - EM6AA160TSE-4G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160TSE-4G
Integrated Circuits (ICs) - Memory - Memory EM6AA160TSE-4G
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160TSE-4G EM6AA160TSE-4G EM6AA160TSE-4G
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 256000 kbits 256000 kbits 256000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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