Etron Technology, Inc. Memory EM6AA160TSE-4G

Description
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II
Datasheet
Description
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EM6AA160TSE-4G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160TSE-4G
Integrated Circuits (ICs) - Memory - Memory EM6AA160TSE-4G
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160TSE-4G EM6AA160TSE-4G EM6AA160TSE-4G
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits
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