Etron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory EM6AA160TSE-4G

Description
IC DRAM 256MBIT PAR 66TSOP II
Datasheet
Description
IC DRAM 256MBIT PAR 66TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160TSE-4G
Integrated Circuits (ICs) - Memory - Memory EM6AA160TSE-4G
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site
IC DRAM 256MBIT PAR 66TSOP II

IC DRAM 256MBIT PAR 66TSOP II

Supplier's Site Datasheet
Memory - EM6AA160TSE-4G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 66-TSOP II

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160TSE-4G EM6AA160TSE-4G EM6AA160TSE-4G
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 250 MHz
Cycle Time 15 ns
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4DDR232M72A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
600MHz Memory IC and Storage Component - 774-HYB18T256324F-20 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details
Memory - 6116LA25SOG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 16 kbits
View Details
Memory - NM24C09N - 1231761-NM24C09N - Win Source Electronics
Specs
Memory Category EEPROM
View Details