Etron Technology, Inc. Memory EM6AA160BKE-4IH

Description
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)
Datasheet
Description
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EM6AA160BKE-4IH - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)

Buy Now
IC DRAM 256MBIT PARALLEL 60FBGA

IC DRAM 256MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160BKE-4IH
Integrated Circuits (ICs) - Memory - Memory EM6AA160BKE-4IH
IC DRAM 256MBIT PAR 60FBGA

IC DRAM 256MBIT PAR 60FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160BKE-4IH EM6AA160BKE-4IH EM6AA160BKE-4IH
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - 100142DC - Shenzhen Shengyu Electronics Technology Limited
Specs
Memory Category Volatile
Density 0 kbits
Supply Voltage Through Hole
View Details
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details