Etron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory EM6AA160BKE-4H

Description
IC DRAM 256MBIT PAR 60FBGA
Datasheet
Description
IC DRAM 256MBIT PAR 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160BKE-4H
Integrated Circuits (ICs) - Memory - Memory EM6AA160BKE-4H
IC DRAM 256MBIT PAR 60FBGA

IC DRAM 256MBIT PAR 60FBGA

Supplier's Site
IC DRAM 256MBIT PARALLEL 60FBGA

IC DRAM 256MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - EM6AA160BKE-4H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160BKE-4H EM6AA160BKE-4H EM6AA160BKE-4H
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7000 ns
Density 256000 kbits 256000 kbits 256000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
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