Etron Technology, Inc. Memory EM6AA160BKE-4H

Description
IC DRAM 256MBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 256MBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 256MBIT PARALLEL 60FBGA

IC DRAM 256MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - EM6AA160BKE-4H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160BKE-4H
Integrated Circuits (ICs) - Memory - Memory EM6AA160BKE-4H
IC DRAM 256MBIT PAR 60FBGA

IC DRAM 256MBIT PAR 60FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160BKE-4H EM6AA160BKE-4H EM6AA160BKE-4H
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 256000 kbits 256000 kbits 256000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
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