Etron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory EM6AA160BKE-4H

Description
IC DRAM 256MBIT PAR 60FBGA
Datasheet
Description
IC DRAM 256MBIT PAR 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM6AA160BKE-4H
Integrated Circuits (ICs) - Memory - Memory EM6AA160BKE-4H
IC DRAM 256MBIT PAR 60FBGA

IC DRAM 256MBIT PAR 60FBGA

Supplier's Site
Memory - EM6AA160BKE-4H - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)

SDRAM - DDR Memory IC 256Mbit Parallel 250 MHz 700 ps 60-FBGA (8x13)

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IC DRAM 256MBIT PARALLEL 60FBGA

IC DRAM 256MBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6AA160BKE-4H EM6AA160BKE-4H EM6AA160BKE-4H
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Cycle Time 0.7000 ns
Density 256000 kbits 256000 kbits 256000 kbits
Supply Voltage Surface Mount 2.3V ~ 2.7V
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