Etron Technology, Inc. Memory EM6A9160TSC-4IG

Description
IC DRAM 128MBIT PAR 66TSOP II
Datasheet
Description
IC DRAM 128MBIT PAR 66TSOP II
Datasheet

Suppliers

Company
Product
Description
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IC DRAM 128MBIT PAR 66TSOP II

IC DRAM 128MBIT PAR 66TSOP II

Supplier's Site Datasheet
Memory - EM6A9160TSC-4IG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR Memory IC 128Mbit Parallel 250 MHz 700 ps 66-TSOP II

SDRAM - DDR Memory IC 128Mbit Parallel 250 MHz 700 ps 66-TSOP II

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM6A9160TSC-4IG
Integrated Circuits (ICs) - Memory - Memory EM6A9160TSC-4IG
IC DRAM 128MBIT PAR 66TSOP II

IC DRAM 128MBIT PAR 66TSOP II

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM6A9160TSC-4IG EM6A9160TSC-4IG EM6A9160TSC-4IG
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.7000 ns 0.7000 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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