SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II
IC DRAM 512MBIT PAR 54TSOP II
IC DRAM 512MBIT PAR 54TSOP II
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | EM63B165TS-5SG | EM63B165TS-5SG | EM63B165TS-5SG |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 4.5 ns | 4.5 ns | |
| Operating Temperature | 0 to 70 C (32 to 158 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits |
