Etron Technology, Inc. Memory EM63B165TS-5SG

Description
SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II
Datasheet
Description
SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EM63B165TS-5SG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

Buy Now Datasheet
IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EM63B165TS-5SG
Integrated Circuits (ICs) - Memory - Memory EM63B165TS-5SG
IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM63B165TS-5SG EM63B165TS-5SG EM63B165TS-5SG
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 4.5 ns 4.5 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits
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