Etron Technology, Inc. Memory EM63B165TS-5ISG

Description
IC DRAM 512MBIT PAR 54TSOP II
Datasheet
Description
IC DRAM 512MBIT PAR 54TSOP II
Datasheet

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Product
Description
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IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site Datasheet
Memory - EM63B165TS-5ISG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM63B165TS-5ISG
Integrated Circuits (ICs) - Memory - Memory EM63B165TS-5ISG
IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM63B165TS-5ISG EM63B165TS-5ISG EM63B165TS-5ISG
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 4.5 ns 4.5 ns
Density 512000 kbits 512000 kbits 512000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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