Etron Technology, Inc. Memory EM63B165TS-5ISG

Description
IC DRAM 512MBIT PAR 54TSOP II
Datasheet
Description
IC DRAM 512MBIT PAR 54TSOP II
Datasheet

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Company
Product
Description
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IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
EM63B165TS-5ISG
Integrated Circuits (ICs) - Memory - Memory EM63B165TS-5ISG
IC DRAM 512MBIT PAR 54TSOP II

IC DRAM 512MBIT PAR 54TSOP II

Supplier's Site
Memory - EM63B165TS-5ISG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

SDRAM Memory IC 512Mbit Parallel 200 MHz 4.5 ns 54-TSOP II

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Technical Specifications

  Lingto Electronic Limited Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number EM63B165TS-5ISG EM63B165TS-5ISG EM63B165TS-5ISG
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 4.5 ns 4.5 ns
Density 512000 kbits 512000 kbits 512000 kbits
Data Rate 200 MHz
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