ERSAELECTRONICS PTE. LTD. Memory IC and Storage Component 774-HYB18T512160B2F-3S

Description
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Product overview: HYB18T512160B2F-3S from Qimonda is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HYB18T512160B2F- 3S can be used for catalog matching and distributor lookup.
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Description
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Product overview: HYB18T512160B2F-3S from Qimonda is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HYB18T512160B2F- 3S can be used for catalog matching and distributor lookup.
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Memory IC and Storage Component - 774-HYB18T512160B2F-3S - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-HYB18T512160B2F-3S
Memory IC and Storage Component 774-HYB18T512160B2F-3S
DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Product overview: HYB18T512160B2F-3S from Qimonda is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HYB18T512160B2F- 3S can be used for catalog matching and distributor lookup.

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, GREEN, PLASTIC, TFBGA-84 Product overview: HYB18T512160B2F-3S from Qimonda is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-HYB18T512160B2F-3S can be used for catalog matching and distributor lookup.

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Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips
Product Number 774-HYB18T512160B2F-3S
Product Name Memory IC and Storage Component
Memory Category DRAM Chip
Access Time 0.4500 ns
Operating Temperature 0 C (32 F)
Number of Words 33554432 k
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