The J111/A series are N-channel JFETs designed for high-gain, low-noise switching, commutator, and chopper applications. They are available in TO-92 and SOT23 packages, with a typical power dissipation of 360 mW and an operating junction temperature range of -55°C to 125°C. The molded plastic case is UL 94 V-0 rated. The gate-to-source breakdown voltage is -40 V, with a saturation current of -2 mA and a cutoff voltage range of -5 V. Input and gate-drain capacitances are each 5 pF at 1 MHz and VGS = -10 V. The devices are RoHS compliant and offer surface mount, through-hole, and bare die options.
JFETs JFET N-Channel -35V Low Noise Product overview: J111 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, -35V. Search-friendly keywords include transistor, BJT, switching, amplification, N-Channel, -35V, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J111 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 288-J111 |
| Product Name | N-Channel -35V Bipolar Transistor |
| Package Type | Bulk |
