The 2N5116 is a P-channel JFET designed for analog switch and chopper applications, with a gate-to-source breakdown voltage of 30 V, a drain-to-source saturation current of -5 mA, and a gate-to-source cutoff voltage of 1 to 4 V. It offers a typical on-resistance of 150 Ω at VGS=0 V and ID=-1 mA. Available in TO-18, TO-92, and SOT23 packages, the TO-18 variant is hermetically sealed for military use. The device operates from -55 °C to 125 °C and meets RoHS compliance. The SOT23 and TO-92 packages feature UL 94 V-0 rated molded plastic cases. Power dissipation is rated at 500 mW with a derating of 4 mW/°C.
Small Signal Field-Effect Transistor, 1-Element, P-Channel, Silicon, Junction FET, TO-18 Product overview: 2N5116 from InterFET is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N5116 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 288-2N5116 |
| Product Name | P-Channel MOSFET Transistor |
