The 2N4393 is an N-channel JFET designed for low-level analog switching, chopper, and commutator applications. It features a gate-to-source cutoff voltage of less than 3.0 V, a drain-to-source saturation current of 5 to 30 mA, and a gate-to-source breakdown voltage of -40 V. The device is available in TO-18, TO-92, and SOT23 packages, with the TO-18 variant being hermetically sealed and suitable for military environments. Maximum power dissipation is 1800 mW at 25°C, with a junction temperature range of -55°C to 125°C. It is RoHS compliant and exhibits low gate leakage, typically less than 50 pA at room temperature. Input capacitance is 14 pF at VDS = 20 V and VGS = 0 V. Turn-on delay time is 15 ns, rise time is 5 ns, and fall time is 30 ns under standard test conditions.
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 Product overview: 2N4393 from InterFET is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N4393 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 288-2N4393 |
| Product Name | N-Channel MOSFET Transistor |
