The 2N4339 is an N-channel JFET designed for low-noise, high-gain amplifier applications, with a gate-to-source breakdown voltage of -50 V, a typical transconductance of 800 μS, and a gate-to-source cutoff voltage between -0.6 V and -1.8 V. It is available in TO-18, TO-92, and SOT23 packages, with the TO-18 case being hermetically sealed. Maximum power dissipation is 300 mW, and the operating junction temperature ranges from -55°C to 125°C. The device is RoHS compliant and exhibits low gate leakage, typically less than 0.1 nA at 125°C.
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18 Product overview: 2N4339 from InterFET is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N4339 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 288-2N4339 |
| Product Name | N-Channel MOSFET Transistor |
