The 2N2609 is a P-channel JFET designed for data switches and low-level chopper applications, with a 30 V gate-to-source breakdown voltage and a typical drain-to-source saturation current of -2 mA. It is available in TO-18, TO-92, and SOT23 packages, with the TO-18 variant being hermetically sealed for military-grade use. The device has a typical input capacitance of 3.2 pF and forward transconductance of 2500 μS, with gate leakage typically under 1 nA at room temperature. Power dissipation is rated at 300 mW, and the operating junction temperature ranges from -55 °C to 125 °C. The SOT23 and TO-92 packages use UL 94V-0 rated plastic cases, and all variants are RoHS compliant.
Small Signal Field-Effect Transistor, P-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN Product overview: 2N2609 from InterFET is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N2609 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 288-2N2609 |
| Product Name | P-Channel MOSFET Transistor |
