The JAN2N5662 is an NPN power silicon transistor designed for switching and amplification applications. It is packaged in a TO-5 case with a base-to-lead length of 5.59 to 5.84 mm and a body width of 7.40 to 7.64 mm. The device has a collector-emitter voltage rating of 200 Vdc, a collector current rating of 2.0 Adc, and a total power dissipation of 1.0 W at +25°C, derating at 5.7 mW/°C above that temperature. Thermal resistance from junction to case is 6.7 °C/W. It meets MIL-PRF-19500/454 qualification standards. The forward current transfer ratio ranges from 40 to 120 at 50 mA collector current and from 15 to 75 at 1.0 A. The collector-emitter saturation voltage is 0.8 V at 2.0 A collector current and 0.4 A base current. The junction temperature range is -65°C to +200°C.
Trans GP BJT NPN 200V 2A 1000mW 3-Pin TO-5 Bag Product overview: JAN2N5662 from Aeroflex is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 2A, 1000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 200V, 2A, 1000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-JAN2N5662 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-JAN2N5662 |
| Product Name | 200V 2A 1000mW Bipolar Transistor |
| Package Type | Bag |
| Packing Method | Bag |
| IC(max) | 2000 milliamps |
