The MRF157 is an enhancement-mode N-channel MOSFET designed for linear large-signal output stages up to 80 MHz. It is packaged in a .900-inch square, 2-leaded style. The device has a continuous drain current rating of 60 A, a drain-source breakdown voltage of 125 V, and a maximum power dissipation of 1350 W at 25 °C. The junction temperature range is -65 °C to +200 °C, with a thermal resistance from junction to case of 0.13 °C/W. Gain is specified at 18 to 21 dB at 30 MHz with a drain voltage of 50 V and a quiescent drain current of 800 mA. Power output efficiency is 45% to 50% at 600 W output.
RF MOSFET Transistors RF Transistor Product overview: MRF157 from Advanced Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-MRF157 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-MRF157 |
| Product Name | MOSFET Transistor |
| Package Type | Tray |
