The BLF245 is an N-channel enhancement mode RF power MOSFET designed for VHF large-signal amplifier applications. It comes in a 0.380-inch 4-lead flat package with drain, gate, and dual source connections. The device supports a maximum drain current of 6.0 A, drain-source voltage of 65 V, and gate-source voltage of ±20 V. Power dissipation is rated at 68 W at 25°C case temperature, with a junction-to-case thermal resistance of 1.8 °C/W. It demonstrates 13 dB typical power gain at 175 MHz, with 50-60% drain efficiency at 150 MHz and capability to withstand a 30:1 load VSWR without power degradation. Operating junction temperature ranges from -65 °C to +150 °C, and storage temperature from -65 °C to +200 °C.
RF MOSFET Transistors RF Transistor Product overview: BLF245 from Advanced Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BLF245 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-BLF245 |
| Product Name | MOSFET Transistor |
| Polarity | N-Channel |
