The MRF492 is an NPN silicon RF power transistor designed for low band VHF large-signal amplification in commercial and industrial FM equipment. It is packaged in a 4-lead flange mount with dimensions of 0.980 to 1.050 inches in length, 0.505 inches in width, and 0.255 inches in height. The transistor has a collector-emitter breakdown voltage of 36 V, a collector-base breakdown voltage of 18 V, and a max collector current of 20 A. It delivers a minimum power gain of 11 dB at 70 W and 50 MHz with 50% efficiency. Power dissipation is rated at 250 W at 25 °C case temperature. Operating junction temperature ranges from -65 °C to +200 °C. The device features an Omnigold™ metalization system and common emitter configuration.
RF Bipolar Transistors RF Transistor Product overview: MRF492 from Advanced Semiconductor, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-MRF492 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-MRF492 |
| Product Name | Bipolar Transistor |
| Package Type | Tray |
