The MRF1000MB is an NPN silicon RF power transistor designed for Class A operation in DME/TACAN applications up to 1090 MHz. It is packaged in a .280 4L pill style with dimensions of 0.220 to 0.230 inches (5.59 to 5.84 mm) in length, 1.055 inches (26.80 mm) in width, and 0.275 to 0.285 inches (6.99 to 7.24 mm) in height. Maximum collector-emitter voltage is 20 V, power dissipation is 7.0 W, and thermal resistance from junction to case is 25.0 °C/W. The device features an Omnigold™ metalization system and provides a power gain of 10 dB at 0.2 W output power and 1090 MHz.
RF Bipolar Transistors RF Transistor Product overview: MRF1000MB from Advanced Semiconductor, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-MRF1000MB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-MRF1000MB |
| Product Name | Bipolar Transistor |
| Polarity | NPN |
| Package Type | Tray |
| Packing Method | Tray |
