EPC Space Single FETs, MOSFETs JANSH2N7682UFAC

The JANSH2N7682UFAC is a radiation-hardened enhancement-mode gallium nitride (GaN) FET designed for space and harsh environments, supporting high-efficiency DC-DC conversion and motor drives in satellite systems. It features a 40 V drain-source voltage rating, a maximum gate-source voltage of +6 V, -4 V, a thermal resistance of 10.57 °C/W, and a maximum drain current of 8 A. The device is housed in an FSMD-A package and maintains performance after exposure to 1000 kRad total ionizing dose and neutron fluences up to 1 × 10¹⁵ neutrons/cm², with SEE immunity up to 84 MeV·mg/cm² at full voltage. It complies with JANS qualification standards pending.