EPC Space Single FETs, MOSFETs JANSH2N7677UFBC

JANSH2N7677UFBC is a radiation-hardened enhancement-mode gallium nitride FET for space and harsh environments, rated for 200 V drain-source voltage, with a maximum on-resistance of 4.02 mΩ, continuous drain current of 24 A, and power dissipation of 31 W in an FSMD-B package. It is qualified for total ionizing dose up to 1000 kRad, single event effects immunity at 84 MeV·cm²/mg with up to 100% of rated breakdown voltage, neutron fluence up to 1 × 10¹⁵ neutrons/cm², and low-dose-rate radiation at 100 mRad/sec. The device maintains pre-radiation specifications under all listed radiation conditions. JANS qualification is pending.