EPC Space Single FETs, MOSFETs JANSH2N7671UFAC

JANSH2N7671UFAC is a radiation-hardened enhancement-mode gallium nitride FET designed for space and harsh environments, featuring a 100 V drain-source breakdown voltage, 2.2 A gate current, and 12 W power dissipation in an FSMD-A package. It is rated for a total ionizing dose of 1000 kRad, SEE immunity up to 84 MeV·mg/cm² at 100% of rated breakdown voltage, and neutron tolerance up to 1 × 10¹⁵ neutrons/cm². Its RDS(on) is 50 mΩ at 25°C with a thermal resistance of 10.57 °C/W. The part meets JANS qualification requirements pending.