EPC Space Single FETs, MOSFETs JANSH2N7667UFBC

JANSH2N7667UFBC is a radiation-hardened enhancement-mode gallium nitride FET for space and harsh environments, packaged in FSMD-B. It has a drain-source voltage rating of 40 V, a continuous drain current of 30 A, and a maximum power dissipation of 56 W. The device exhibits immunity to total ionizing dose up to 1000 kRad, single event effects at LET of 84 MeV·mg/cm², and retains performance after exposure to 1 × 10¹⁵ neutrons/cm². Its on-resistance is 11 mΩ at 25°C with a gate threshold voltage range of +6 V to −4 V. Thermal resistance is 2.25 °C/W. The part is qualified to JANS standards with qualification pending. It is designed for satellite motor drives including reaction wheels and solar array mechanisms.