EPC Space Single FETs, MOSFETs FBG30N04CC

The FBG30N04CC is a radiation-hardened eGaN® HEMT power switching device designed for commercial satellite EPS and avionics, deep space probes, and rad-hard DC-DC conversion. It is housed in a compact hermetic FSMD-C surface-mount package measuring 4.32 mm × 4.06 mm with a weight of 0.113 g. The device offers a 300 V drain-to-source voltage rating, continuous drain current of 4 A at 25°C, and a maximum on-state resistance of 370 mΩ at 5 V gate-source voltage. It features source sense pin connectivity, logic level operation, and is immune to total ionizing dose up to 100 mRad/sec and neutron fluence up to 4 × 10¹³ neutrons/cm². It is hardened against single event effects up to 83.2 MeV·cm²/mg and meets AEC-Q200 qualification standards. Operating junction temperature ranges from -55°C to +150°C.