EPC Space Single FETs, MOSFETs FBG20N18BC

The FBG20N18BC is a radiation-hardened, 200 V, 18 A eGaN® power HEMT in a compact, hermetic FSMD-B surface mount package, designed for aerospace and deep space applications. It features a drain-source on-resistance of 30 mΩ at 25°C, a gate-source threshold voltage range of 0.8 to 2.5 V, and total ionizing dose immunity for both LDR and HDR environments. The device has a junction temperature range of -55°C to +150°C, weighs 0.135 g, and includes a source sense pin for improved switching performance. Thermal resistance from junction to case is 4.82 °C/W, and junction-to-ambient is 56 °C/W when mounted on a specified PCB. It meets ESD Class 1A and is rated for operation under MIL-STD-750.3471 test conditions.