EPC Space Single FETs, MOSFETs FBG10N05AC

The FBG10N05AC is a 100 V, 5 A radiation-hardened eGaN® power FET in a hermetic FSMD-A surface-mount package, measuring 3.30 mm x 1.88 mm, designed for satellite, avionics, and deep-space applications. It features a source-sense pin for improved switching performance, a drain-source on-resistance of 58 mΩ at 5 A and 5 V gate drive, and operates over a junction temperature range of -55°C to +150°C. The device is immune to total ionizing dose effects and meets ESD Class 1A. Thermal resistance from junction to case is 12.08 °C/W. It complies with MIL-STD-750.3471 for gate charge measurement and is rated for operation in high-reliability space environments.