EPC Space Single FETs, MOSFETs FBG04N30BC

The FBG04N30BC is a radiation-hardened, 40 V, 30 A eGaN® HEMT designed for satellite and avionics applications. It features a compact hermetic FSMD-B surface mount package with dimensions of 5.59 mm x 3.81 mm and weighs 0.135 g. The device has a drain-source on-state resistance of 11 mΩ maximum at 25°C and a gate-source threshold voltage ranging from 0.8 V to 2.5 V. It operates from -55°C to +150°C junction temperature and includes a source-sense pin for accurate current sensing. The device is immune to total ionizing dose (TID) in both low and high dose rate environments and meets ESD Class 1A. It complies with MIL-STD-750.3471 for gate charge measurements and is RoHS compliant.