EPC Space Single FETs, MOSFETs EPC7030MSH

The EPC7030MSH is a radiation-hardened, 300 V, 50 A enhancement-mode gallium nitride (eGaN®) FET designed for space and high-reliability applications. It features a compact hermetic FSMD-M surface-mount package measuring 8.99 mm x 6.32 mm with a source sense pin and dual gate. The device operates from -55°C to +150°C junction temperature with a maximum drain-to-source voltage of 300 V and continuous drain current of 50 A at 5 V gate-source bias. It is hardened against total ionizing dose up to 1 Mrad, neutron fluence up to 4 × 10¹⁵ neutrons/cm², and single event effects up to 83.2 MeV·cm²/mg. Thermal resistance from junction to case is 0.94 °C/W. The part meets MIL-STD-750 for radiation testing and is classified as ESD Class 1B. Weight is 0.190 g.