EPC Space Single FETs, MOSFETs EPC7020GSH

EPC7020GSH is a 200 V, 51 A radiation-hardened eGaN® HEMT transistor designed for space and high-reliability applications, featuring a compact hermetic 5-pin surface-mount package with dual gate and source sense pin. It maintains specifications after exposure to 1 Mrad of total ionizing dose and up to 4 × 10¹⁵ neutrons/cm², with single-event effect immunity up to 83.2 MeV·cm²/mg. The device has a maximum on-resistance of 14.5 mΩ at 25°C, a gate-source threshold voltage range of 0.8 to 2.5 V, and operates from -55°C to +150°C. Thermal resistance is 45 °C/W from junction to ambient and 1.84 °C/W from junction to case. The package weighs 0.170 g.